Modelling of point defect complex formation and its application to H+ ion implanted silicon-Reference-Cited by-同舟云学术

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Modelling of point defect complex formation and its application to H+ ion implanted silicon

Published:2015-10 Issue: Volume:99 Page:187-195
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Cherkashin N.,Darras F.-X.,Pochet P.,Reboh S.,Ratel-Ramond N.,Claverie A.

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Thin-wafer silicon IGBT with advanced laser annealing and sintering process;Rahimo;IEEE Electron Device Lett.,2012

2. Extended defects formation in nanosecond laser-annealed ion implanted silicon;Qiu;Nano Lett.,2014

3. Separation of Silicon wafers by the smart-cut method;Bruel;Mater. Res. Innov.,1999

4. Role of strain in the blistering of hydrogen-implanted silicon;Lee;Appl. Phys. Lett.,2006

5. Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon;Di;Appl. Phys. Lett.,2010

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2. Revealing nanoscale strain mechanisms in ion-irradiated multilayers;Acta Materialia;2022-05

3. Interface-Driven Strain in Heavy Ion-Irradiated Zr/Nb Nanoscale Metallic Multilayers: Validation of Distortion Modeling via Local Strain Mapping;ACS Applied Materials & Interfaces;2022-03-02

4. Blistering kinetics in H-implanted 4H-SiC for large-area exfoliation;Current Applied Physics;2021-11

5. Study of surface exfoliation induced by hydrogen implantation and annealing in GaSb (100) substrates;Materials Science in Semiconductor Processing;2021-11

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