Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films-Reference-Cited by-同舟云学术

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Published:2017-02 Issue: Volume:125 Page:125-135
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Vilalta-Clemente A.,Naresh-Kumar G.,Nouf-Allehiani M.,Gamarra P.,di Forte-Poisson M.A.,Trager-Cowan C.,Wilkinson A.J.

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference61 articles.

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3. High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures;Gonschorek;Appl. Phys. Lett.,2006

4. High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure;Medjdoub;Appl. Phys. Express,2015

5. Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy;Eljarrat;Microsc. Microanal.,2012

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