Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices
Author:
Funder
Engineering and Physical Sciences Research Council
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference51 articles.
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3. Synthesis and properties of [NR4]3[SbS4] (R = Me, Et, n-Pr, n-Bu) and the crystal structures of [N(n-Bu)4]3[SbS4]⋅6H2O and [N(n-Bu)4]3[Sb(S2O3)3]·2THF;Journal of Molecular Structure;2023-04
4. Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices;Materials Advances;2023
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