Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer-Reference-Cited by-同舟云学术

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Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer

Published:2006-02 Issue:12 Volume:51 Page:2400-2406
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Kim Young-Soon,Kim Hyung-Il,Cho Joong-Hee,Seo Hyung-Kee,Dar M.A.,Shin Hyung-Shik,Ten Eyck Gregory A.,Lu Toh-Ming,Senkevich Jay J.

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference22 articles.

1. Dual Damascene Interconnect of Copper and Low Permittivity Dielectric for High Performance Integrated Circuits

2. Damascene copper electroplating for chip interconnections

3. The chemistry of additives in damascene copper plating

4. Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces

5. L. Peters, Semiconductor International, March 2003.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition (ALD) of palladium: from processes to applications;Critical Reviews in Solid State and Materials Sciences;2023-11-15

2. Palladium Chemical Mechanical Planarization in Packaging and Barrier Level Integration;ECS Journal of Solid State Science and Technology;2022-05-01

3. Electroless copper deposition using 3 mercapto propionic acid as an additive;Materials Today: Proceedings;2021

4. Recent Advances in Barrier Layer of Cu Interconnects;Materials;2020-11-09

5. Review of effect of ultrasound on electroless plating processes;Transactions of the IMF;2011-11

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