The annealing effect on memory state stability and interlayer coupling in perpendicular magnetic tunnel junctions with ultrathin MgO barrier-Reference-Cited by-同舟云学术

The annealing effect on memory state stability and interlayer coupling in perpendicular magnetic tunnel junctions with ultrathin MgO barrier

Published:2019-05 Issue: Volume:477 Page:142-146
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Lv Hua,Fidalgo João,Leitão Diana C.,Silva Ana V.,Kämpfe Thomas,Riedel Stefan,Langer Juergen,Wrona Jerzy,Ocker Berthold,Freitas Paulo P.,Cardoso Susana

Funder

Fundacao para a Ciencia e Tecnologia

FSE/POPH

Electronic Component Systems for European Leadership Joint Undertaking

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance;Wang;Nat. Commun.,2017

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