Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions

Published:2020-12-28 Issue:2 Volume:7 Page:2000976
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lv Hua¹²,Fidalgo Joao¹²,Silva Ana V.¹²,Leitao Diana C.¹²,Kampfe Thomas³,Langer Juergen⁴,Wrona Jerzy⁴,Ocker Berthold⁴,Freitas Paulo P.¹²,Cardoso Susana¹²^ORCID

Affiliation:

1. Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC MN) Lisbon 1000‐029 Portugal

2. Departamento de Física Instituto Superior Tecnico (IST) Universidade de Lisboa Lisbon 1040‐001 Portugal

3. Fraunhofer Institute for Photonic Microsystems IPMS Dresden 01099 Germany

4. Singulus Technologies AG Kahl am Main 63796 Germany

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000976

Reference63 articles.

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