All-electric spin transistor using perpendicular spins-Reference-Cited by-同舟云学术

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All-electric spin transistor using perpendicular spins

Published:2016-04 Issue: Volume:403 Page:77-80
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Kim Ji Hoon,Bae Joohyung,Min Byoung-Chul,Kim Hyung-jun,Chang Joonyeon,Koo Hyun Cheol

Funder

National Research Foundation of Korea (NRF)

MSIP

KIST

KU-KIST

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Electronic analog of the electro‐optic modulator

2. Control of Spin Precession in a Spin-Injected Field Effect Transistor

3. Gate modulation of spin precession in a semiconductor channel

4. Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect

5. All-electric all-semiconductor spin field-effect transistors

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1. High-efficient and gate-tunable spin transport in GaN thin film at room temperature;Applied Physics Letters;2023-05-01

2. Emerging non-CMOS devices and technologies;Nanoelectronics : Physics, Materials and Devices;2023

3. Spin field effect transistors and their applications: A survey;Microelectronics Journal;2020-12

4. Rashba Effect in Functional Spintronic Devices;Advanced Materials;2020-09-15

5. Performance Study of Spin Field-Effect Transistor Based on Cobalt-Modified Iron Oxide Ferromagnetic Electrode;Advances in Intelligent Systems and Computing;2020-06-14

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