Thick PECVD silicon dioxide films for MEMS devices-Reference-Cited by-同舟云学术

Thick PECVD silicon dioxide films for MEMS devices

Published:2016-04 Issue: Volume:240 Page:1-9
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Ho Shih-Shian^ORCID,Rajgopal Srihari,Mehregany Mehran

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference20 articles.

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4. Plasma-enhanced chemical vapour depositon of silicon dioxide using tetraeth oxysilane as silicon source;Kulisch;Thin Solid Films,1989

5. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate;Becker;J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.,1987

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