Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma-Reference-Cited by-同舟云学术

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma

Published:2020-05-05 Issue:12 Volume:32 Page:5153-5161
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Nguyen Viet Huong¹^ORCID,Sekkat Abderrahime²,Masse de la Huerta César Arturo²,Zoubian Fadi³,Crivello Chiara²,Rubio-Zuazo Juan⁴⁵,Jaffal Moustapha⁶,Bonvalot Marceline⁶,Vallée Christophe⁶,Aubry Olivier³,Rabat Hervé³,Hong Dunpin³,Muñoz-Rojas David²

Affiliation:

1. Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam

2. Université Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38400 Grenoble, France

3. GREMI, UMR 7344 CNRS-Universite d’Orléans, BP 6744, 45067 Orléans, France

4. Spanish CRG BM25-SpLine Beamline at the ESRF, 71 Av des Martyrs CS 40220, 38043 Grenoble, France

5. Instituto de Ciencia de Materiales de Madrid-CSIC, Sor Juana Inés de la Cruz, 3, Cantoblanco, 28049 Madrid, Spain

6. LTM, CNRS, 17 avenue des Martyrs, 38045 Grenoble, France

Funder

Agence Nationale de la Recherche

Consejo Nacional de Ciencia y Tecnolog?a

Universit? Grenoble Alpes

Horizon 2020 Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.0c01148

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4. O’Neal, H. E.; Ring, M. A.; Martin, J. G. Chemical Vapor Deposition (CVD) of Silicon Dioxide Films Using Oxygen-Silicon Source Reactants and a Free Radical Promoter. US 5637351, 1997.

5. Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

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