Low-frequency noise limitations of InAsSb-, and HgCdTe-based infrared detectors-Reference-Cited by-同舟云学术

Low-frequency noise limitations of InAsSb-, and HgCdTe-based infrared detectors

Published:2020-04 Issue: Volume:305 Page:111908
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Ciura Łukasz,Kopytko Małgorzata,Martyniuk Piotr

Funder

National Science Centre

Polish Ministry of Science and Higher Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference22 articles.

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2. Carrier transport in the valence band of nBn III–V superlattice infrared detectors;Rhiger;J. Electron. Mater.,2019

3. 1/f noise and other slow, nonexponential kinetics in condensed matter;Weissman;Rev. Mod. Phys.,1988

4. 1/f Noise in (Hg, Cd)Te photodiodes;Tobin;IEEE Trans. Electron Devices,1980

5. Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes;Guinedor;J. Electron. Mater.,2019

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