Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors-Reference-Cited by-同舟云学术

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors

Published:2019-06-03 Issue:10 Volume:48 Page:6053-6062
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Rhiger David R.^ORCID,Smith Edward P.

Funder

Night Vision and Electronic Sensors Directorate

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07319-y.pdf

Reference31 articles.

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3. P. Martyniuk, M. Kopytko, and A. Rogalski, Opto-Electron. Rev. 22, 127 (2014).

4. D.Z.-Y. Ting, A. Soibel, L. Höglund, J. Nguyen, C.J. Hill, A. Khoshakhlagh, and S.D. Gunapala, Type − II superlattice infrared detectors.Semiconductors and Semimetals, Vol. 84, ed. S.D. Gunapala, D.R. Rhiger, and C. Jagadish (Amsterdam: Elsevier, 2011), pp. 1–57.

5. J.B. Rodriguez, E. Plis, G. Bishop, Y.D. Sharma, H. Kim, L.R. Dawson, and S. Krishna, Appl. Phys. Lett. 91, 043514 (2007).

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