Abstract
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors.
Funder
Agence Nationale de la Recherche
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
2 articles.
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