Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors
Author:
Affiliation:
1. Northwestern Univ. (United States)
Publisher
SPIE
Reference25 articles.
1. A new semiconductor superlattice
2. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
3. Focal Plane Arrays in Type-II Superlattices;Razeghi,2005
4. Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes
5. Impact of scaling base thickness on the performance of heterojunction phototransistors
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