Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB)-Reference-Cited by-同舟云学术

Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB)

Published:2004-09 Issue:1 Volume:115 Page:104-108
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Park Myung-Il,Choo Hyo-Tae,Yoon Suk-Hwan,Park Chong-Ook

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. L.E. Hollander Jr., Semiconductor explosive igniter, US Patent 3,366,055, 30 January 1969.

2. B.A.M. Tovar, Electrothermal transients in highly doped phosphorous diffused silicon-on-sapphire semiconductor bridge under high current density conditions, Ph. D. dissertation, The University of New Maxico, 1993, p. 11.

3. Semiconductor bridge: a plasma generator for the ignition of explosive;Benson;J. Apply. Phys.,1987

4. Characteristics of plasma generated by polysilicon semiconductor bridge (SCB);Lee;Sens. Actuators A,2002

5. S.M. Sze, VLSI Technology, McGraw-Hill, 1998 (Chapter 3).

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