Characteristics of plasma generated by polysilicon semiconductor bridge (SCB)-Reference-Cited by-同舟云学术

Characteristics of plasma generated by polysilicon semiconductor bridge (SCB)

Published:2002-02 Issue:2-3 Volume:96 Page:252-257
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Lee Kye-Nam,Park Myung-Il,Choi Sung-Ho,Park Chong-Ook,Uhm Han S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Semiconductor bridge: a plasma generator for the ignition of explosive;Benson;J. Appl. Phys.,1987

2. B.A.M. Tonor PhD dissertation, University of Maxico (1993) 12.

3. A method for obtaining and analyzing sensitivity data;Dixon;J. Am. Stat. Assoc.,1948

4. Breakdown properties of high-pressure electrical discharge;Uhm;Phys. Plasmas,2000

5. Properties of plasma generated by electrical breakdown in flames;Uhm;Phys. Plasmas,1999

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