Semiconductor Bridge Temperature Change Study under Different Excitation Methods and Sizes

Abstract

Abstract The temperature of the semiconductor bridge increases due to the Joule heat effect in the way of capacitive discharge voltage excitation and current excitation, but the temperature distribution and the effect of different excitation methods and different sizes on the temperature change are not very clear; aiming at this problem, the temperature distribution of the semiconductor bridge after electrical energy excitation is simulated by finite element simulation. The effects of excitation mode and bridge area size on the temperature rise process of the bridge were studied by the control variable method; finally, the high-temperature area of the bridge body is only distributed in the bridge area, the temperature of the bridge body is positively correlated with electrical energy but negatively correlated with the area of the bridge area, and the current excitation method is better than the effect of voltage excitation. In addition, the conclusion is that the appropriate increase in excitation energy and the reduction of bridge size can help the temperature rise to improve the efficiency of the semiconductor bridge in practical applications.