Boron and indium incorporation in GaP(001) surfaces by vapour deposition: Density-functional supercell calculations of the surface stability-Reference-Cited by-同舟云学术

Boron and indium incorporation in GaP(001) surfaces by vapour deposition: Density-functional supercell calculations of the surface stability

Published:2009-08 Issue:16 Volume:603 Page:2520-2525
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Jenichen Arndt,Engler Cornelia

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference31 articles.

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4. Surface segregation and ordering in III-V semiconductor alloys

5. First-principles study of InP and GaP(001) surfaces

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1. Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE;Journal of Crystal Growth;2013-05

2. Reconstructions and surface facets of the GaAs(112)A and (112)B surfaces: First-principles DFT supercell calculations;Surface Science;2013-02

3. Stability and band gaps of InGaP, BGaP, and BInGaP alloys: Density-functional supercell calculations;physica status solidi (b);2010-01

4. Metal-organic chemical vapour deposition of (BInGa)P: Density-functional calculations to the mechanisms;Journal of Crystal Growth;2009-12