First-principles study of InP and GaP(001) surfaces-Reference-Cited by-同舟云学术

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First-principles study of InP and GaP(001) surfaces

Published:2001-11 Issue:1-2 Volume:22 Page:32-37
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Pulci O.,Lüdge K.,Vogt P.,Esser N.,Schmidt W.G.,Richter W.,Bechstedt F.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference28 articles.

1. Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy

2. A comparison of RHEED reconstruction phases on (100) InAs, GaAs and InP

3. In situmonitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

4. (2×4)GaP(001) surface: Atomic structure and optical anisotropy

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1. Determination of III-V/Si absolute interface energies: Impact on wetting properties;Physical Review B;2023-08-21

2. Ab Initio Theory of Interband Transitions;Springer Handbook of Surface Science;2020

3. A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting;Advanced Functional Materials;2018-05-28

4. Surfaces of Compound Semiconductors;Surface and Interface Science;2013-11-13

5. GaP(100) and InP(100) Surfaces;GaP Heteroepitaxy on Si(100);2013

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