Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
2. Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
3. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
4. Epitaxial growth of BGaAs and BGaInAs by MOCVD
5. Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
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3. Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms;Optical Materials Express;2020-10-22
4. Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy;Applied Physics Letters;2020-09-21
5. Silicon-Integrated Red-Light Optical Gain Medium Based on BGaAs/GaP Quantum Wells;2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2020-09
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