Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference45 articles.
1. Review of SiGe HBTs on SOI
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3. Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth
4. 45nm CMOS technology with low temperature selective epitaxy of SiGe
5. Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
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2. Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study;Beilstein Journal of Nanotechnology;2021-07-13
3. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01
4. Modelling of Dynamics of Formation and Growth of Nanoscale Surface Structures in ‘Plasma–Condensate’ Systems;Nanosistemi, Nanomateriali, Nanotehnologii;2020-12
5. Noise induced effects at nano-structured thin films growth during deposition in plasma-condensate devices;Condensed Matter Physics;2020-09
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