1. A 0.18μm 90GHz fT SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications;Freeman;IEEE IEDM Tech Dig,1999
2. A 0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL;Washio;IEEE IEDM Tech Dig,1999
3. Joseph A, Coolbaugh D, Zierak M, Wuthrich R, Geiss P, He Z, et al. A 0.18μm BiCMOS technology featuring 120/100GHz (fT/fmax) HBT and ASIC-compatible CMOS using copper interconnect. In: Proc BCTM, 2001. p. 143–6.
4. A 4.2-ps ECL ring-oscillator in a 285-GHz fMAX SiGe technology;Jagannathan;IEEE ED Lett,2002
5. SiGe HBTs with cut-off frequency of 350GHz;Rieh;IEEE IEDM Tech Dig,2002