Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Low energy electron microscopy studies of Ge and Ag growth on Si(111)
3. Scanning tunneling microscopy studies of Ge/Si films on Si(111): From layer by layer to quantum dots
4. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
5. Surfactants in epitaxial growth
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1. Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations;physica status solidi (b);2020-08-31
2. Analysis of the dislocation structure at the Ge/Si(111) heterointerface;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-07
3. Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem;Bulletin of the Russian Academy of Sciences: Physics;2012-03
4. Growth of Ag on the Bi-terminated Ge/Si(111) surface;Surface Science;2008-06
5. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
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