Atomic structure of high Miller index Si(47 35 7) surface-Reference-Cited by-同舟云学术

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Atomic structure of high Miller index Si(47 35 7) surface

Published:2020-03 Issue: Volume:693 Page:121549
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Zhachuk R.A.,Dolbak A.E.,Shklyaev A.A.

Funder

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference39 articles.

1. Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy;Yakushev;Inorg. Mater.,2009

2. Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates;Varavin;Infrared Phys. Technol.,2018

3. Spin chains and electron transfer at stepped silicon surfaces;Aulbach;Nano Lett.,2016

4. Self-organization of Ge islands on high-index Si substrates;Omi;Phys. Rev. B,1999

5. Nanowires and nanorings at the atomic level;Kawamura;Phys. Rev. Lett.,2003

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