Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168509010038.pdf
Reference11 articles.
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2. Ryu, Y.S., Song, B.S., Kang, T.W., and Kim, T.W., Dependence of the Structural and Electrical Properties of the Hg/Te Flux-Rate Ratios for Hg0.7Cd0.3Te Epilayers Grown on CdTe Buffer layers, J. Mater. Sci., 2004, vol. 39, nos. 3–4, pp. 1147–1149.
3. Colin, T., Minsas, D., Gjoen, S., et al., in: Mater. Res. Soc. Symp. Proc., 1994, vol. 430, pp. 575–579.
4. Mitra, P., Case, F.C., Glass, H.L., et al., HgCdTe Growth on (552) Oriented CdZnTe by Metalorganic Vapor Phase Epitaxy, J. Electron. Mater., 2001, vol. 30, no. 6, pp. 779–784.
5. Aqariden, F., Shih, H.D., Chandra, D., and Liao, P.K., Molecular beam Epitaxial Growth of HgCdTe on CdZnTe(311)B, J. Electron. Mater., 2000, vol. 29, no. 6, pp. 727–728.
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