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Homogeneous Si films on CaF2/Si(111) due to boron enhanced solid phase epitaxy

  • Published:2006-09 Issue:18 Volume:600 Page:3637-3641
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

Wollschläger J.,Deiter C.,Bierkandt M.,Gerdes A.,Bäumer M.,Wang C.R.,Müller B.H.,Hofmann K.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Oblique Angle Deposition of Nanostructures for Energy Applications;Advanced Ceramic Coatings and Materials for Extreme Environments III;2013-11-22

2. Multifractal analysis of sputtered CaF2thin films;Surface and Interface Analysis;2013-10-18

3. Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology;Journal of Applied Physics;2011-11-15

4. Biaxial CdTe/CaF2 films growth on amorphous surface;Thin Solid Films;2009-10

5. Biaxially oriented CaF2 films on amorphous substrates;Journal of Crystal Growth;2008-07
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