CaF2∕Si∕CaF2 resonant tunneling diodes grown by B surfactant-mediated epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1853522
Reference16 articles.
1. Epitaxial growth of a metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructure and its application to quantum‐effect devices
2. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
3. Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy
4. Thermal expansion of cadmium fluoride
5. Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy
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1. Scanning tunneling microscopy study of CaF2 on Si(111): observation of metastable reconstructions;Journal of Physics D: Applied Physics;2021-11-23
2. Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process;Japanese Journal of Applied Physics;2020-04-14
3. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15
4. Rapid liftoff of epitaxial thin films;Journal of Materials Research;2013-08-20
5. Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template;Surface Science;2012-10
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