Structure and electronic spectroscopy of steps on GaAs(110) surfaces-Reference-Cited by-同舟云学术

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Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Published:2012-01 Issue:1-2 Volume:606 Page:28-33
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Gaan S.,Feenstra R.M.,Ebert Ph.,Dunin-Borkowski R.E.,Walker J.,Towe E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference21 articles.

1. The structure-sensitive adsorption of H2O and H2S on flat and stepped Si(001) surfaces

2. Bilayer growth period oscillation of the Sb2 reactivity during molecular beam epitaxy of AlSb (001)

3. Role of steps in deposition rate in silane chemical vapor deposition onSi(111)

4. Tuning reactive epitaxy of silicides with surface steps: Silicide quantum dot arrays on Si(111)

5. Charged steps on III-V compound semiconductor surfaces

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1. Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets;Journal of Vacuum Science & Technology B;2023-05-23

2. Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110);Physical Review Materials;2022-12-27

3. Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy;Journal of Physics D: Applied Physics;2021-05-28

4. Interface characterization of Al2O3/m-plane GaN structure;AIP Advances;2021-01-01

5. Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions;Journal of Applied Physics;2020-11-14

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