Role of steps in deposition rate in silane chemical vapor deposition onSi(111)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.085314/fulltext
Reference11 articles.
1. Atomic processes in crystal growth
2. Growth Processes in Si/Si(111) Epitaxy Observed by Scanning Tunneling Microscopy during Epitaxy
3. Atomic structures of Si() surface during silane UHV-CVD
4. Surface reaction mechanisms on Si(111)-(7 × 7) during silane UHV-CVD
5. High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)
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1. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15
2. Structure and electronic spectroscopy of steps on GaAs(110) surfaces;Surface Science;2012-01
3. Chapter 16 Growth and Etching of Semiconductors;Dynamics;2008
4. Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2007-01-31
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