Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(001) surface-Reference-Cited by-同舟云学术

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Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(001) surface

Published:2009-01 Issue:1 Volume:603 Page:183-189
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Hara Shinsuke,Kobayashi Hidekazu,Ota Kohei,Nagura Yuichiro,Irokawa Katsumi,Fujishiro Hiroki Inomata,Watanabe Kazuyuki,Miki Hirofumi,Kawazu Akira

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference28 articles.

1. Aluminum on the Si(100) surface: Growth of the first monolayer

2. Cluster-ordered array on the Si(001) surface formed by Al deposition

3. Atomic structure of cluster-ordered array on the Si(001) surface induced by aluminum

4. Indium-induced reconstructions of the Si(100) surface

5. Structural model for theSi(100)4×3−Insurface phase

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy;Japanese Journal of Applied Physics;2010-08-20

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