Structural model for theSi(100)4×3−Insurface phase
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12492/fulltext
Reference21 articles.
1. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
2. Evolution of the Si(100)‐2×2‐In reconstruction
3. Indium-induced reconstructions of the Si(100) surface
4. Structure of the Si(100)-(2×2)In surface
5. Reconstruction, step-bunching and faceting of a vicinal Si( 100) surface induced by indium adsorption
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3. Activation energy of surface diffusion and terrace width dynamics during the growth of In(4×3) on Si(100)-(2×1) by femtosecond pulsed laser deposition;Journal of Applied Physics;2008-05
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