Formation and binding energies of vacancies in the Al(111) surface: Density functional theory calculations confirm simple bond model-Reference-Cited by-同舟云学术

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Formation and binding energies of vacancies in the Al(111) surface: Density functional theory calculations confirm simple bond model

Published:2015-07 Issue: Volume:637-638 Page:85-89
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Zhu Yan,Zheng Wengen,Pan Yan,Pan Yanfei,Liu Tao,Zhou Xvguang,Shi Daning,Shi Yangguang,Wei Xinyuan

Funder

Nanjing University of Aeronautics and Astronautics

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference36 articles.

1. e. g. See and W. H. Gitzen, (1970).

2. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

3. Metastable Alumina Polymorphs: Crystal Structures and Transition Sequences

4. Microtexture of the thermally grown alumina in commercial thermal barrier coatings

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