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Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

  • Published:2019-09 Issue: Volume:687 Page:25-33
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

Kosolobov S.,Nazarikov G.,Sitnikov S.,Pshenichnyuk I.,Fedina L.,Latyshev A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference73 articles.

1. Surface dynamics dominated by bulk thermal defects: the case of NiAl(110);McCarty;Phys. Rev. B Condens. Matter Mater. Phys.,2005

2. Self-and dopant diffusion in silicon, germanium, and their alloys;Bracht,2014

3. Point defects and dopant diffusion in silicon;Fahey;Rev. Mod. Phys.,1989

4. Extended point defects in crystalline materials: Ge and Si;Cowern;Phys. Rev. Lett.,2013

5. Self-diffusion in crystalline silicon: a single diffusion activation enthalpy down to 755°C;Südkamp;Phys. Rev. B,2016

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1. Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy;Surface Science;2024-03

2. Temperature Influence on the Si(111) Surface Relief Evolution During Au Deposition;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

3. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM;Applied Surface Science;2023-01

4. Gold Drop Formation and Motion over a Si(111) Substrate: Monte Carlo Simulation;Optoelectronics, Instrumentation and Data Processing;2022-12

5. Monte Carlo Simulation of Gold Drop Formation and Movement over a Silicon Substrate;2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM);2022-06-30
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