Electronic transport in low-temperature silicon nitride
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Stability of electrical properties of nitrogen‐rich, silicon‐rich, and stoichiometric silicon nitride films
2. An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering
3. Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance microwave plasma chemical vapor deposition
4. Hydrogenated silicon nitride thin films deposited between 50 and 250 °C using nitrogen/silane mixtures with helium dilution
5. The hydrogen content of plasma-deposited silicon nitride
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2. Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time;Journal of Materials Science;2011-11-23
3. Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers;Acta Physica Polonica A;2011-09
4. Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma;Plasma Chemistry and Plasma Processing;2010-08-01
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