Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides-Reference-Cited by-同舟云学术

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Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides

Published:2001-02 Issue:1-3 Volume:280 Page:78-85
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Goguenheim Didier,Bravaix Alain,Ananou Bouchra,Trapes Céline,Mondon Francois,Reimbold Gilles

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling

2. A hot hole-induced low-level leakage current in thin silicon dioxide films

3. Hot hole stress induced leakage current (SILC) transient in tunnel oxides

4. Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

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1. Degraded power MOSFET effects on Class-A power amplifier: Modelling studies considering feedback;Microelectronics Reliability;2021-07

2. Thermal robustness evaluation of nonvolatile memory using Pt nanogaps;Applied Physics Express;2018-07-26

3. A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories;Microelectronics Reliability;2007-09

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