Thermal robustness evaluation of nonvolatile memory using Pt nanogaps
Author:
Funder
Japan Science and Technology Agency
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=8/a=085202/pdf
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1. High temperature electronics using SiC: actual situation and unsolved problems
2. Leakage current models of thin film silicon-on-insulator devices
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5. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography
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1. Metal Nanogap Memory: Performances and Switching Mechanism;ACS Applied Materials & Interfaces;2024-05-13
2. Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands*;Chinese Physics B;2020-04-01
3. Highly durable and flexible gallium-based oxide conductive-bridging random access memory;Scientific Reports;2019-10-02
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