An improved time domain analysis of the charge pumping current
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. J.-L. Autran, B. Balland, G. Barbottin, in: G. Barbottinet, A. Vapaille (Eds.), Instabilities in Silicon Devices – Silicon Passivation and Related Instabilities, vol. 3, Elsevier Science, North-Holland, Amsterdam, 1999, p. 405 (Chapter 6)
2. Charge pumping in MOS devices
3. Statistics of the Recombinations of Holes and Electrons
4. Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps
5. Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps
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2. Evaluation of Accuracy of Charge Pumping Current in Time Domain;IEICE Transactions on Electronics;2015
3. Analysis of electron capture process in charge pumping sequence using time domain measurements;Applied Physics Letters;2014-12-29
4. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide;Advances in Materials Science and Engineering;2013
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