Stopping power of SiO2 for 0.2–3.0 MeV He ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Energy loss and straggling of H and He ions of keV energies in Si and C
2. Improved stoichiometry measurements using 4He elastic backscattering: experiment and simulation
3. The Si surface yield as a calibration standard for RBS
4. Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra
5. Correction of Ziegler's stopping powers of Al, Si and their oxides for MeV He ions
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