Ion beam studies of MBE grown GaN films on silicon substrates
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Potential applications of III–V nitride semiconductors
2. Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
3. Electroluminescence from erbium and oxygen coimplanted GaN
4. Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
5. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
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1. Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction;Thin Solid Films;2008-10
2. Extended X-ray absorption fine structure studies of GaN epilayers doped with Er;Optical Materials;2006-05
3. Photoluminescence studies of Eu-implanted GaN epilayers;physica status solidi (b);2005-06
4. Extended X-ray absorption fine structure studies of thulium doped GaN epilayers;Superlattices and Microstructures;2004-10
5. Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool;Journal of Physics D: Applied Physics;2003-03-19
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