Luminescence from Er and Tb implanted into MOS tunnel diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. High efficiency and fast modulation of Er‐doped light emitting Si diodes
2. Room‐temperature electroluminescence from Er‐doped crystalline Si
3. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
4. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy
5. Erbium implanted thin film photonic materials
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1. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments;Journal of Applied Physics;2014-09-28
2. Low temperature and decay lifetime photoluminescence of Eu and Tb nanoparticles embedded into SiO2;Journal of Luminescence;2014-09
3. Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition;Applied Physics Letters;2014-06-23
4. (Invited) Rare Earth Doped Metal-Oxide-Semiconductor Structures: A Promising Material System or a Dead End of Optoelectronic Evolution?;ECS Transactions;2014-03-25
5. Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications;Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting;2014
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