Author:
Kimura T,Nakanose T,Wang W,Isshiki H,Saito R
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-05
2. The range distribution and annealing behavior of Er ions implanted in silicon-on-insulator;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-03
3. Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-05
4. Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
5. Auger de-excitation of the 1.54 μm emission of Er- and O-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03