Author:
Michel J.,Zheng B.,Palm J.,Ouellette E.,Gan F.,Kimerling L. C.
Abstract
AbstractWe report on the excitation and de-excitation processes of erbium implanted in silicon and the integration of Si:Er light emitting devices (LED) with standard CMOS technology. We find two deexcitation processes, an Auger process below 100 K and a phonon mediated energy backtransfer above 100 K. We present the first optical voice link with a silicon LED as the emitter. Optical transmission system performance with our LED is possible below 200 K.
Publisher
Springer Science and Business Media LLC
Reference11 articles.
1. Electronic Properties and Their Relations to Optical Properties in Rare Earth Doped III-V Semiconductors
2. [9] Palm J. , to be published
3. [8] Palm J. , Gan F. , Zheng B. , Michel J. , and Kimerling L.C. , Phys. Rev. B, in press
4. [7] Morse M. , Zheng B. , Palm J. , Duan X. , and Kimerling L.C. , this volume
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