Damage formation in InP due to high electronic excitation by swift heavy ions-Reference-Cited by-同舟云学术

Damage formation in InP due to high electronic excitation by swift heavy ions

Published:1998-12 Issue:1-4 Volume:146 Page:341-349
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wesch W.,Herre O.,Gaiduk P.I.,Wendler E.,Klaumünzer S.,Meier P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

2. Proceedings of the Second International Symposium On Swift Heavy Ions in Matter, Bensheim/Darmstadt, 1992, Rad. Eff. 126 (1–4) (1993)

3. Proceedings of the Third International Symposium On Swift Heavy Ions in Matter, Caen, 1995, Nucl. Instr. and Meth. B 107 (1995)

4. K. Izui, S. Furuno, Proceedings of the XIth International Congress on Elec. Micr., 1299, Kyoto 1986

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4. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04