Induced damage by high energy heavy ion irradiation at the GANIL accelerator in semiconductor materials
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Complex defects introduced into Si by high‐energy electron irradiation: Production rates of defects in n‐Si
2. Empirical equations for predicting resistivity changes with fluence for electron-irradiated silicon
3. Energy levels in electron irradiated n-type germanium
4. Threshold energy for atomic displacement in electron irradiated germanium
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