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Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

  • Published:2016-04 Issue: Volume:372 Page:29-37
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hu P.P.,Liu J.,Zhang S.X.,Maaz K.,Zeng J.,Guo H.,Zhai P.F.,Duan J.L.,Sun Y.M.,Hou M.D.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disorder induced in GaN thin films by 200 MeV silver ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-06

2. Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions;Semiconductor Science and Technology;2024-05-03

3. Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy;Laser & Photonics Reviews;2024-04-20

4. Lattice damage in InGaN induced by swift heavy ion irradiation;Chinese Physics B;2022-10-01

5. Response of soil structure and crop yield to soft rock in Mu Us sandy land, China;Scientific Reports;2022-01-18
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