White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1585138
Reference12 articles.
1. Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy
2. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
3. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
4. Effect of matrix on InAs self-organized quantum dots on InP substrate
5. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
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1. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
2. Quantum Dots with Built-in Charge for Enhancing Quantum Dot Solar Cells and Infrared Photodetectors;Quantum Dot Devices;2012
3. Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy;Journal of Crystal Growth;2008-04
4. Carrier Transfer in the Arrays of Coupled Quantum Dots;Self-Assembled Quantum Dots;2008
5. Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method;Applied Physics Letters;2006-08-21
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