On the phosphorus characterization in thin SiO2 (P,B) CVD layer deposited onto a silicon substrate by PIXE
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Simultaneous nuclear reaction analyses of boron and phosphorus in thin borophosphosilicate glass films using (α,p) reactions
2. H. Allali, Ph.D. Thesis, Université Claude Bernard Lyon I, 1993
3. Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment
4. Proton induced X-ray emission as a tool for trace element analysis
5. Optimisation of peak-to-background ratios in proton-induced X-ray analysis of material deposited on thin and thick backings
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1. PIXE detection limit for aluminium thin film deposited on Si-based matrix;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
2. A deep view in cultural heritage—confocal micro X-ray spectroscopy for depth resolved elemental analysis;Applied Physics A;2011-11-30
3. On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques;Advanced Materials Research;2011-08
4. On the Characterization of Ultra Thin Al Films Deposited onto SiC Substrate Using PIXE Technique;Advanced Materials Research;2011-08
5. On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique;Materials Science Forum;2011-03
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