Simultaneous nuclear reaction analyses of boron and phosphorus in thin borophosphosilicate glass films using (α,p) reactions

Author:

Walsh D.S,Doyle B.L

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Semiconductor Devices Physics and Technology;Sze,1985

2. Modified Phosphosilicate Glasses for VLSI Applications

3. K.J. Uram, J.K. Shugrue , N.P. Sandler, in: V.J. Kapoor, W.D. Brown (Eds.), Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, Dielectric Science and Technology and Electronics Divisions Proceedings, vol. 94–16, The Electrochemical Society, 1994

4. Improvement in depth resolution of medium-mass element analysis: Application to biocompatible glasses

5. Depth profiling of phosphorus using resonances in the reaction

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2. Investigation of phosphorous in thin films using the 31 P(α,p) 34 S nuclear reaction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-03

3. Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-05

4. Effects of SrO/ZnO on structure and properties of UV-transmitting borophosphosilicate glass;Physica B: Condensed Matter;2011-12

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