Depth profiling of phosphorus using resonances in the reaction-Reference-Cited by-同舟云学术

Depth profiling of phosphorus using resonances in the reaction

Published:1988-12 Issue:3-4 Volume:35 Page:446-450
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

McIntyre L.C.,Leavitt J.A.,Dezfouly-Arjomandy B.,Oder J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Annealing behaviour of C-, N-, Mg-, Al- and P-implanted Si and Ge

2. Study of phosphorus implantation in silicon by channeling and nuclear resonance techniques

3. Proc. Int. Symp. on Three Day In Depth Review on the Nuclear Accelerator Impact in the Interdisciplinary Field, Laboratori Nazionali di Legnaro;Segeth,1984

4. Protons from the alpha-particle bombardment of 31P

5. Effects of fluorine implantation on the kinetics of dry oxidation of silicon

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