Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment-Reference-Cited by-同舟云学术

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Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment

Published:1994-05 Issue:1-4 Volume:90 Page:501-504
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Allali H.,Nsouli B.,Thomas J.-P.,Szymczak W.,Wittmaack K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Sputtering by Particle Bombardment III;Sundqvist,1991

2. Desorption induced by H+n clusters (7 ⩽ n ⩽ 61) at 600 keV

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1. Characterization of ion species of silicon oxide films using positive and negative secondary ion mass spectra;Applied Surface Science;2006-11

2. Assessment of the plasma desorption time-of-flight mass spectrometry technique for pesticide adsorption and degradation on ‘as-received’ treated soil samples;Rapid Communications in Mass Spectrometry;2005

3. Caractérisation structurale du réseau organique du verre hybride (TMOS-TMSM-MMA);Annales de Chimie Science des Matériaux;2003-03

4. Application of TOF-PDMS and ESCA techniques to the characterization of phosphate layers;Annales de Chimie Science des Matériaux;2003-01

5. On the phosphorus characterization in thin SiO2 (P,B) CVD layer deposited onto a silicon substrate by PIXE;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

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