Ion beam synthesis of buried SiC layers in silicon: Basic physical processes-Reference-Cited by-同舟云学术

Ion beam synthesis of buried SiC layers in silicon: Basic physical processes

Published:2001-05 Issue:1-4 Volume:178 Page:44-54
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lindner Jörg K.N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference47 articles.

1. W.J. Choyke, H. Matsunami, G. Pensl (Eds.), A Review of Fundamental Questions and Applications to Current Device Technology, Vol. I and II, Akademie Verlag, Berlin, 1997

2. SiC Materials and Devices,1998

3. Silicon carbide: synthesis and processing

4. keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

5. Synthesis of SiC Microstructures in Si Technology by High Dose Carbon Implantation: Etch‐Stop Properties

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